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| r07ds0851ej0100 rev.1.00 page 1 of 26 aug 20, 2012 preliminary data sheet ? pd166011t1j intelligent power device 1. overview 1.1 description dual n-channel high-side switch with charge pump, diagnostic feedback with load current sense and embedded protection functions. 1.2 features ? built-in charge pump ? low on-state resistance ? short circuit protection ? shutdown by over current detection and over load detection ? over temperature protection ? shutdown with auto-restart on cooling ? built-in diagnostic function ? proportional load current sensing ? defined fault signal in case of abnormal load condition ? loss of ground protection ? under voltage lock out ? active clamp operation at in ductive load switch off ? aec qualified ? rohs compliant with pure tin plating 1.3 application ? light bulb (~55 w) switching ? switching of all types of 14 v dc grounded loads, such as led, inductor, resistor and capacitor 2. ordering information part no. lead plating packing package ? pd166011t1j-e1-ay * 1 pure mate sn tape 1500 p/reel 12-pin power hssop (prsp0013fa-a) note: * 1 pb-free (this product does not contain pb in the external electrode) note: the information contained in this document is the one that was obtained when the document was issued, and may be subject to change. r07ds0851ej0100 rev.1.00 aug 20, 2012
? pd166011t1j preliminary r07ds0851ej0100 rev.1.00 page 2 of 26 aug 20, 2012 3. specification 3.1 block diagram out1 is1 in1 sen channel 1 in2 out2 is2 rgnd gnd von1 icc ignd vin1 vsen vcc vis2 ris load vout2 vin2 v cc channel 2 equivalent to channel 1 control / protection circuit and output mos ris load charge pump current sense output voltage sense power supply voltage sense temperature sensor current detector esd protection esd protection fault signal output internal power supply dynamic clamp sense enable vis1 vout1 isen iin1 il2 il1 iis2 iis1 control logic 3.2 pin arrangement sen out2 out2 out1 out1 gnd in2 is2 is1 in1 v cc v cc tab v cc tab v cc (top view) 789 10 11 12 123456 3.2.1 pin function pin name pin function recommended connection gnd ground connection connected to gnd inn input signal for channel n (n = 1 to 2) conn ected to mcu port through 2 k-10 k serial resistor isn current sense and diagnosis output signal channel n (n = 1 to 2) connected to gnd through a 2 k-5 k resistor sen sense enable input connected to mcu port through 2 k-10 k serial resistor outn protected high-side power output channel n (n = 1 to 2) connected to load with small 50-100 nf capacitor in parallel v cc positive power supply for logic supply as well as output power supply connected to battery voltage with small 100 nf capacitor in parallel ? pd166011t1j preliminary r07ds0851ej0100 rev.1.00 page 3 of 26 aug 20, 2012 3.3 absolute maximum ratings (t a = 25c, unless otherwise specified) parameter symbol rating unit test conditions v cc voltage v cc1 28 v v cc voltage at reverse battery condition v cc2 ?16 v at nominal load current. v cc voltage for full short circuit protection v cc3 28 v v cc voltage under load dump condition v cc4 40 v r i = 1 ? , r l = 3.2 ? , r is = 2 k ? , t d = 400 ms load current i l self limited a total power dissipation for whole device (dc) p d 2.0 w t a = 85c, device on 50 mm ? 50 mm ? 1.5 mm epoxy pcb fr4 with 6 cm 2 of 70 ? m copper area ?0.5 to 10 v cc = 9 v to 16 v voltage at in pin v in v cc2 to 0 v r in = 2 k ? , at reverse battery condition, t < 2 min. ?0.5 to 10 v cc = 9 v to 16 v voltage at sen pin v sen v cc2 to 0 v r sen = 2 k ? , at reverse battery condition, t < 2 min. ?0.5 to v cc + 0.5 v cc = 9 v to 16 v voltage at is pin v is v cc2 to 0 v r is = 2 k ? , at reverse battery condition, t < 2 min. inductive load switch-off energy dissipation single pulse e as 64 mj v cc = 13.5 v, i l = 5.5 a, t ch,start < 150c maximum allowable energy under short circuit condition e as(sc) 120 mj v cc = 18 v, t ch,start < 150c, r supply = 10 m ? , r short = 50 m ? l supply = 5 ? h, l short = 15 ? h channel temperature t ch ?40 to +150 c dynamic temperature increase while switching ? t ch 60 c storage temperature t stg ?55 to +150 c 2000 v hbm aec-q100-002 std. r = 1.5 k ? , c = 100 pf esd susceptibility v esd 200 v mm aec-q100-003 std. r = 0 ? , c = 200 pf note: all voltages refer to ground pin of the device. 3.4 thermal characteristics parameter symbol min. typ. max. unit test conditions r th(ch-a) ? 30 ? c/w all channel thermal characteristics r th(ch-c) ? 1.3 ? c/w all channel device on 50 mm ? 50 mm ? 1.5 mm epoxy pcb fr4 with 6 cm 2 of 70 ? m copper area ? pd166011t1j preliminary r07ds0851ej0100 rev.1.00 page 4 of 26 aug 20, 2012 3.5 electrical characteristics 3.5.1 operation function (t ch = ?40 to 150c, v cc = 9 to 16 v, unless otherwise specified) parameter symbol min. typ. max. unit test conditions operating voltage v cc 5.5 ? 28 v v in = 4.5 v, v on < 0.5 v, r l = 12 ? ? 2.5 5.5 one channel operating current per channel i gnd ? 5.0 10 ma all channel v in = 5 v ? 0.1 1.0 t ch = 25c ? ? 8.0 t ch = 125c standby current i cc(off) ? ? 24 ? a t ch = ?40 to 150c v in = 0 v, v sen = 0 v, v out = 0 v, v is = 0 v ? 19 25 i l = 5 a, t ch = 25c on state resistance per channel r on ? 35 48 m? i l = 5 a, t ch = 150c output voltage drop limitation at small load current v on(nl) ? 50 ? mv i l < 0.5 a output clamp v on(cl) 20 24 28 v v cc = 13.5 v, i l = 40 ma output leakage current per channel i l(off) ? ? 5 ? a v in = 0 v input resistance * 1 r in ? 100 ? ? low level input voltage v il ?0.3 ? 1.0 v high level input voltage v ih 3.0 ? 10 v low level input current i il 2 ? 30 ? a v in = 0.4 v high level input current i ih 5 ? 75 ? a v in = 5 v sense enable input resistance * 1 r sen ? 100 ? ? sense enable low level input voltage v senl ?0.3 ? 1.0 v sense enable high level input voltage v senh 3.0 ? 10 v sense enable low level input current i senl 2 ? 30 ? a v sen = 0.4 v sense enable high level input current i senh 5 ? 75 ? a v sen = 5 v turn on delay time to 10% v cc t d(on) ? 30 100 ? s turn off delay time to 90% v cc t d(off) ? 220 600 ? s turn on time to 90% v cc t on ? 100 250 ? s turn off time to 10% v cc t off ? 270 700 ? s slew rate 30% to 70% v cc dv/dton 0.08 0.33 0.6 v/ ? s slew rate 70% to 30% v cc ?dv/dtoff 0.05 0.35 0.85 v/ ? s energy at turn on eon ? 0.65 ? mj energy at turn off eoff ? 0.55 ? mj v cc = 13.5 v, r l = 3.2 ? note: * 1 not tested, specified by design ? pd166011t1j preliminary r07ds0851ej0100 rev.1.00 page 5 of 26 aug 20, 2012 3.5.2 protection function (t ch = ?40 to 150c, v cc = 9 to 16 v, unless otherwise specified) parameter symbol min. typ. max. unit test conditions ? ? 55 t ch = ?40c 12 28 ? t ch = 25c 10 26 ? t ch = 105c i l5.5,5(sc) 8 24 ? t ch = 150c v cc = 5.5 v, v on = 5 v ? ? 110 t ch = ?40c 42.5 75 ? t ch = 25c 33 63 ? t ch = 105c i l13.5,5(sc) 29.5 55 ? t ch = 150c v cc = 13.5 v, v on = 5 v ? ? 130 t ch = ?40c 55 86 ? t ch = 25c 42.5 70 ? t ch = 105c short circuit detection current i l16,5(sc) 38 60 ? a t ch = 150c v cc = 16 v, v on = 5 v 200 ? ? t ch = 25c, v cc = 16 v 260 ? ? t ch = 105c, v cc = 16 v driving capability dr(capa) 290 ? ? m? t ch = 150c, v cc = 16 v over load detection voltage 1 v on(ovl)1 4.0 5.2 6.4 v over load detection voltage 2 v on(ovl)2 0.45 1 1.6 v turn-on check delay after input signal positive slope t d(oc) 400 ? ? ? s thermal shutdown temperature t th 150 175 ? c thermal hysteresis ? t th ? 10 ? c ? 0.8 0.85 t ch = 25c output voltage drop per channel in case of reverse battery condition vds(rev) ? 0.61 0.66 v t ch = 150c i l = ?3.5 a, v cc = ?13.5 v reverse current through gnd pin * 1 ?i gnd ? 90 ? ma v cc = ?13.5 v integrated resistor in gnd line * 1 r gnd ? 140 ? ? output current while gnd disconnected * 1 i l(gnd) ? ? 1 ma i in = 0 a, i sen = 0 a, i gnd = 0 a, i is = 0 a note: * 1 not tested, specified by design ? pd166011t1j preliminary r07ds0851ej0100 rev.1.00 page 6 of 26 aug 20, 2012 3.5.3 diagnosis function (t ch = ?40 to 150c, v cc = 9 to 16 v, v sen = 5 v, unless otherwise specified) parameter symbol min. typ. max. unit test conditions open load detection threshold at off-state v out(ol) 2.0 3.2 4.4 v v in = 0 v sense signal in case of fault condition v is,fault 5.0 6.2 8.0 v v in = 0 v, i is = 2.5 ma sense signal current limitation i is,lim 4 ? ? ma v in = 0 v sense signal invalid after negative input slope t d(fault) ? ? 1.2 ms v in = 5 v to 0 v, v out = v cc fault signal settling time t s(fault) ? ? 200 ? s v in = 0 v, r is = 2 k ? , v out = 0 to >v out(ol) 3940 4595 5250 t ch = ?40c 4150 4580 5010 t ch = 25c 4080 4425 4770 t ch = 150c i l = 6.0 a 4050 4810 5570 t ch = ?40c 4020 4705 5390 t ch = 25c 4050 4460 4870 t ch = 150c i l = 3.0 a 4100 5100 6100 t ch = ?40c 4410 5130 5850 t ch = 25c current sense ratio k ilis 4250 5050 5850 t ch = 150c i l = 0.5 a v in = 5 v current sense voltage limitation v is(lim) 5.0 6.2 8.0 v i is = 0.5 ma, i l = 5 a current sense leakage/offset current i is(lh) ? ? 3 ? a v in = 5 v, i l = 0 a current sense leakage, while diagnostic disable i is(dis) ? ? 5 ? a v sen = 0 v, i l = 5 a current sense settling time to iis static ? 10% after positive input slope * 1 t sis(on) ? ? 300 ? s v in = 0 to 5 v, r l = 3.2 ? , r is = 2 k ? current sense settling time to iis static ? 10% after change of load current * 1 t sis(lc) ? ? 50 ? s v in = 5 v, r is = 5 k ? , i l = 3 a to 5 a sense signal settling time t sis(sen) ? ? 10 ? s v sen = 0 v to 5 v, v in = 0 v, r is = 5 k ? , v out > v out(ol) sense signal deactivation time * 1 t dis(sen) ? ? 10 ? s v sen = 5 v to 0 v, v in = 0 v, r is = 5 k ? , v out > v out(ol) note: * 1 not tested, specified by design ? pd166011t1j preliminary r07ds0851ej0100 rev.1.00 page 7 of 26 aug 20, 2012 3.6 function description 3.6.1 driving circuit the high-side output is turned on, if the input pin is over v ih . the high-side output is turned off, if the input pin is open or the input pin is below v il . threshold is designed between v ih min and v il max with hysteresis. in pin is pulled down with constant current source. in gnd r gnd i in r in internal ground v in v out v cc 0 0 t on on off off v in i l v cc switching a resistive load switching lamps v out t 0 i is i l v out i is i is,iim v in 0 0 0 0 0 0 0 t ? pd166011t1j preliminary r07ds0851ej0100 rev.1.00 page 8 of 26 aug 20, 2012 switching an inductive load v on(cl) v cc 0 0 0 0 v in i l v out i is t the dynamic clamp circuit works only when the inductive load is switched off. when the inductive load is switched off, the voltage of out falls below 0 v. the gate voltage of sw 1 is then nearly equal to gnd. next, the voltage at the source of sw1 (= gate of output mos) falls below the gnd voltage. sw1 is turned on, and the clamp diode is connected to the gate of the output mos, activating the dynamic clamp circuit. when the over-voltage is applied to v cc , the gate voltage and source voltage of sw1 are both nearly equal to gnd. sw1 is not turned on, the clamp diode is not connected to the gate of the output mos, and the dynamic clamp circuit is not activated. v cc zd esd zd az r sen r in out sw1 internal ground logic gnd sen in is ? pd166011t1j preliminary r07ds0851ej0100 rev.1.00 page 9 of 26 aug 20, 2012 3.6.2 short circuit protection case 1: in pin is high in an overload condition, which includes a short circuit condition. the device shuts down automatically when either or both of following conditions (a, b) is detected. the sense signal is fixed at v is,fault . shutdown is latched until the next reset via input. the device shuts down automatically when condition (c) is detected with auto restart by cooling down. (a) i l > i l(sc) (b) v on > v on(ovl)1 after t d(oc) (c) tch > tth case 1-(a) i l > i l(sc) i l(sc) v on short circuit detection depending on the external impedance v is,fault 0 0 0 0 v in i l v out /v cc v is t i l(sc) v bat v on 0 0 0 0 t d(oc) short circuit detection v is,fault v in i l v out /v cc v is t depending on the external impedance case 1-(b) v on > v on(ovl)1 after t d(oc) v on(ovl)1 ? pd166011t1j preliminary r07ds0851ej0100 rev.1.00 page 10 of 26 aug 20, 2012 case1-(c) tch > tth over temperature detection tth i l(sc) v on(ovl)1 v on(ovl)2 v on 0 t d(oc) t d(oc) t d(oc) v in v is i l v out /v cc t depending on the external impedance tch v is,fault (evaluation circuit) sen = high n = 1, 2 v cc gnd v in r is rshort v out v on v is v bat inn outn isn i is i l : cable impedance sen 0 0 0 ? pd166011t1j preliminary r07ds0851ej0100 rev.1.00 page 11 of 26 aug 20, 2012 case 2: short circuit during on-condition the device shuts down automatically when either or both of following conditions (a) is detected. detection (a) value is activate after v on(ovl)2 . there is hysteresis between detection (a) value and activate (a) value. the sense signal is fixed at v is,fault . shutdown is latched until the next reset via input. the device shuts down automatically when condition (b) is detected with auto restart by cooling down. (a) v on > v on(ovl)2 after v on < v on(ovl)2 (b) tch > tth t i l(sc) i l(sc) depending on the external impedance t d(oc) t d(oc) short circuit detection short circuit detection short circuit short circuit v is,fault v on(ovl)1 v on(ovl)2 v on(ovl)2 0 v in 0 depending on the external impedance v is i l 0 v out /v cc 0 v in 0 t v is,fault 0 v is 0 v out /v cc case 2-(a) v on > v on(ovl)2 after v on < v on(ovl)2 i l 0 v on(ovl)1 ? pd166011t1j preliminary r07ds0851ej0100 rev.1.00 page 12 of 26 aug 20, 2012 v out case2-(b) tch > tth 0 short circuit i l(sc) t d(oc) t d(oc) t d(oc) v on(ovl)1 v on ? pd166011t1j preliminary r07ds0851ej0100 rev.1.00 page 14 of 26 aug 20, 2012 3.6.5 loss of ground protection in case of complete loss of the device ground connections, but connected load ground, the device keeps in on state or securely changes to or keeps in off state depend on v in condition. 3.6.6 driving capability ? pd166011 can drive above 200 m ? as load resistibility include load itsel f, wire harness, contact resistance of connector, wiring resistibility of pcb at v cc = 9 to 16 v, tch = 25c condition. the short circuit detection current changes according v cc voltage and v on voltage for the purpose of to be strength of the robustness under short circuit condition. 0 20 40 60 80 100 048121620 v on [v] i l(sc) [a] il16,5(sc) load resistibility: 200 m ? pd166011t1j preliminary r07ds0851ej0100 rev.1.00 page 15 of 26 aug 20, 2012 3.6.7 current sense output i is,lim i is(lh) k ilis = i l /i is i is i l current sense ratio 3000 3500 4000 4500 5000 5500 6000 7000 6500 024 13567 load current i l [a] current sense ratio k ilis i l v on v on(nl) r on 50 mv typ. tch = ?40c tch = 150c ? pd166011t1j preliminary r07ds0851ej0100 rev.1.00 page 16 of 26 aug 20, 2012 3.6.8 measurement condition switching waveform of out pin ton 90% 70% 30% 10% dv/dton toff in t t v out dv/dtoff 3.6.9 diagnostics ? normal operation to open load condition, pull-up resistor active condition off on tsis(on) tsis(lc) i is r is open load td(fault) off v on ? pd166011t1j preliminary r07ds0851ej0100 rev.1.00 page 18 of 26 aug 20, 2012 3.7 package drawings (unit: mm) 7 12 1 m s s detail of lead end d d1 a a2 a1 e bp lp he c a 3 0.20 6 s e a a b 5.10 4.10 0.15 5.60 max. 0.10 1.60 0.10 4.60 max. m x s a b l 1 a4 a 5 m 0.20 s a m 0.20 s b m 0.20 s b m 0.20 s b d d1 e he a a2 bp c lp x 0.27 l1 5 0.2 0 0.80 6.40 7.80 7.50 10.30 0.05 2.35 0.42 y 0. 10 referance symbol min nom max dimension in millimeters a1 0.00 2.25 0.37 2.55 0.10 2.45 0.50 6.30 7.65 7.40 10.10 6.50 7.95 7.60 10.50 0.23 0.32 e 1.00 0.60 1.00 1.40 2 8 jeita package code renesas code previous code mass (typ .) [g] - prsp0013fa-a p12s1-100-111 0.4 a3 a5 0.82 a4 0.05 0.30 s y ? pd166011t1j preliminary r07ds0851ej0100 rev.1.00 page 19 of 26 aug 20, 2012 3.8 taping information this is one type (e1) of directi on of the device in the career tape. -e1 type draw-out side 3.9 marking information this figure indicates the marking items and arrangement. ho wever, details of the letterform, the size and the position aren?t indicated. 166011 pb-free plaiting marking internal administrative code internal administrative code lot code *1 week code (2 digit number) year code (2 digit number) note: *1. composition of the lot code ? pd166011t1j preliminary r07ds0851ej0100 rev.1.00 page 20 of 26 aug 20, 2012 4. typical characteristics (t ch = 25c, v cc = 12 v, unless otherwise specified) operation current per channel vs. ambient temperature ?10 ?5 0 5 10 20 15 ?10 ?5 0 5 10 20 15 ?10 ?5 0 5 10 20 15 ?50 0 50 100 150 200 t a - ambient temperature - c ?50 0 50 100 150 200 t a - ambient temperature - c ?50 0 50 100 150 200 t a - ambient temperature - c i gnd - operation current per channel - ma operation current all channel vs. ambient temperature i gnd - operation current all channel - ma ?50 0 50 100 150 200 t a - ambient temperature - c standby current vs. ambient temperature i cc(off) - standby current - a r on - on-state resistance - m r on - on-state resistance - m on state resistance vs. v cc voltage on state resistance vs. ambient temperature v cc - v 0 5 10 15 20 25 30 0 5 10 15 20 25 30 020 15 10 5 output voltage drop limitation at small load current vs. v cc voltage 020 15 10 5 v on(nl) - output voltage drop limitation at small load current - mv v cc - v 0 10 20 30 40 50 60 70 80 90 100 ? pd166011t1j preliminary r07ds0851ej0100 rev.1.00 page 21 of 26 aug 20, 2012 0 0.5 1.0 1.5 2.5 2.0 18 20 22 24 26 28 32 30 ?50 0 50 100 150 200 t a - ambient temperature - c ?50 0 50 100 150 200 t a - ambient temperature - c ?50 0 50 100 150 200 t a - ambient temperature - c output clamp voltage (inductive load switch off) vs. ambient temperature low level input voltage vs. ambient temperature v il - low level input voltage - v 0 ?50 0 50 100 150 200 t a - ambient temperature - c low level input current vs. ambient temperature i il - low level input current - a 0 0.5 1.0 1.5 2.5 2.0 ?50 0 50 100 150 200 t a - ambient temperature - c high level input voltage vs. ambient temperature v ih - high level input voltage - v 5 10 15 20 25 30 35 40 45 50 0 ?50 0 50 100 150 200 t a - ambient temperature - c high level input current vs. ambient temperature i ih - high level input current - a 5 10 15 20 25 30 35 40 45 50 output voltage drop limitation at small load current vs. ambient temperature v on(nl) - output voltage drop limitation at small load current - mv v on(cl) - output clamp voltage (inductive load switch off) - v 0 10 20 30 40 50 60 70 80 90 100 ? pd166011t1j preliminary r07ds0851ej0100 rev.1.00 page 22 of 26 aug 20, 2012 ?50 0 50 100 150 200 t a - ambient temperature - c 0.5 1.0 1.5 2.5 2.0 0 ?50 0 50 100 150 200 t a - ambient temperature - c turn on delay time to 10% v cc vs. ambient temperature t d(on) - turn-on delay time to 10% v cc - s 50 100 150 200 0 ?50 0 50 100 150 200 t a - ambient temperature - c turn off delay time to 90% v cc vs. ambient temperature t d(off) - turn-off delay time to 90% v cc - s 100 300 200 400 500 0 5 10 15 20 25 30 35 40 45 50 sense enable low level input voltage vs. ambient temperature v senl - sense enable low level input voltage - v 0 ?50 0 50 100 150 200 t a - ambient temperature - c sense enable low level input current vs. ambient temperature i senl - sense enable low level input current - a 0 5 10 15 20 25 30 35 40 45 50 ?50 0 50 100 150 200 t a - ambient temperature - c sense enable high level input current vs. ambient temperature i senh - sense enable high level input current - a ?50 0 50 100 150 200 t a - ambient temperature - c 0.5 1.0 1.5 2.5 2.0 sense enable high level input voltage vs. ambient temperature v senh - sense enable high level input voltage - v 0 v cc = 13.5 v v cc = 13.5 v ? pd166011t1j preliminary r07ds0851ej0100 rev.1.00 page 23 of 26 aug 20, 2012 0 ?50 0 50 100 150 200 t a - ambient temperature - c over load detection voltage 1 vs. ambient temperature v on(ovl)1 - over load detection voltage 1 - v 2 4 1 3 5 6 ?50 0 50 100 150 200 t a - ambient temperature - c over load detection voltage 2 vs. ambient temperature v on(ovl)2 - over load detection voltage 2 - v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 ?50 0 50 100 150 200 t a - ambient temperature - c slew rate 30% to 70% v cc vs. ambient temperature dv/dton - slew rate 30% to 70% v cc - v/ s 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ?50 0 50 100 150 200 t a - ambient temperature - c slew rate 70% to 30% v cc vs. ambient temperature ?dv/dton - slew rate 70% to 30% v cc - v/ s 0 ?50 0 50 100 150 200 t a - ambient temperature - c turn on time vs. ambient temperature t on - turn-on time - s 50 100 150 200 0 ?50 0 50 100 150 200 t a - ambient temperature - c turn off time vs. ambient temperature t off - turn-off time - s 100 300 200 400 500 v cc = 13.5 v v cc = 13.5 v ? pd166011t1j preliminary r07ds0851ej0100 rev.1.00 page 24 of 26 aug 20, 2012 ?50 0 50 100 150 200 t a - ambient temperature - c sense signal in case of fault condition vs. ambient temperature ?50 0 50 100 150 200 t a - ambient temperature - c current sense voltage limitation vs. ambient temperature v is(lim) - current sense voltage limitation - v 0 ?50 0 50 100 150 200 t a - ambient temperature - c 0 ?50 0 50 100 150 200 t a - ambient temperature - c turn on check delay after input signal positive slope vs. ambient temperature t d(oc) - turn-on check delay after input signal positive slope - s 200 600 800 1200 400 1000 open load detection threshold at off state vs. v cc voltage 020 15 10 5 v out(ol) - open load detection threshold at off-state - v v cc - v 0 1 2 3 4 5 6 sense signal in case of fault condition vs. v cc voltage 020 15 10 5 v is.fault - sense signal in case of fault condition - v v cc - v 0 2 4 6 8 10 v is.fault - sense signal in case of fault condition - v 0 2 4 6 8 10 2 4 6 8 10 open load detection threshold at off state vs. ambient temperature v out(ol) - open load detection threshold at off-state - v 0 1 2 3 4 5 6 ? pd166011t1j preliminary r07ds0851ej0100 rev.1.00 page 25 of 26 aug 20, 2012 ?50 0 50 100 150 200 t a - ambient temperature - c current sense leakage/offset current vs. ambient temperature i is(lh) - current sense leakage/offset current - a 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 ?50 0 50 100 150 200 t a - ambient temperature - c current sense leakage current vs. ambient temperature i is(dis) - current sense leakage current - a 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 5. thermal characteristics transient thermal resistance vs. pulse width 0.1 1 10 1000 100 0.001 0.01 0.1 1 10 100 1000 pw - pulse width - s r th(t) - transient thermal resistance - c/w r th(ch-a) = 30c/w r th(ch-c) = 1.3c/w device on 50 mm 50 mm 1.5 mm epoxy pcb fr4 with 6 cm 2 of 70 m copper area ? pd166011t1j preliminary r07ds0851ej0100 rev.1.00 page 26 of 26 aug 20, 2012 6. application example in principle note: r4 is for limp home mode for channel 1. when r4 is used, rp1 are necessary. in1 is1 v cc sen in2 out2 out1 is2 c f2 gnd 10 nf to load micro- controller port port port an. input an. input to 14 v battery r1 r2 r3 to load vdd 3.3 v to 5 v rp1 rp2 rp3 rs1 rs2 r f1 r f2 100 nf c f1 10 nf rpu r4 all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history ? pd166011t1j data sheet description rev. date page summary 1.00 aug 20, 2012 ? first edition issued notice 1. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 3. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of renesas electronics or others. 4. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of renesas electronics product. 5. renesas electronics products are classified according to the following two quality grades: "standard" and "high quality". t he recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. "standard": computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "high quality": transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. renesas electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). you must check the quality grade of each renesas electronics product before using it in a particular application. you may not use any renesas electronics product for any application for which it is not intended. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for which the product is not intended by renesas electronics. 6. you should use the renesas electronics products described in this document within the range specified by renesas electronics , especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas electronics shall have no liability for malfunctions or damages arising out of the use of renesas electronics products beyond such specified ranges. 7. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have s pecific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. further, renesas electronics products are not subject to radiation resistance design. please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compatib ility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. renesas electronics products and technology may not be used for or incorporated into any products or systems whose manufactu re, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. you should not use renesas electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. when exporting the renesas electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. it is the responsibility of the buyer or distributor of renesas electronics products, who distributes, disposes of, or othe rwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, renesas electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of renesas electronics products. 11. this document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of renesa s electronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this doc ument or renesas electronics products, or if you have any other inquiries. (note 1) "renesas electronics" as used in this document means renesas electronics corporation and also includes its majority-o wned subsidiaries. (note 2) "renesas electronics product(s)" means any product developed or manufactured by or for renesas electronics. htt p ://www.renesas.co m refer to "htt p ://www.renesas.com/" for the latest and detailed information . r e n esas el ec tr o ni cs am e ri ca in c . 2880 scott boulevard santa clara , ca 95050-2554 , u.s.a . tel: +1-408-588-6000, fax: +1-408-588-6130 renesas electronics canada limited 1101 nicholson road, newmarket, ontario l3y 9c3, canada tel: +1-905-898-5441, fax: +1-905-898-3220 renesas electronics europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k tel: +44-1628-651-700, fax: +44-1628-651-804 renesas electronics europe gmbh arcadiastrasse 10, 40472 dsseldorf, germany tel: +49-211-65030, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. 7th floor, quantum plaza, no.27 zhichunlu haidian district, beijing 100083, p.r.china tel: +86-10-8235-1155, fax: +86-10-8235-7679 renesas electronics (shanghai) co., ltd. unit 204, 205, azia center, no.1233 lujiazui ring rd., pudong district, shanghai 200120, china tel: +86-21-5877-1818, fax: +86-21-6887-7858 / -7898 renesas electronics hong kong limited unit 1601-1613, 16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +852-2886-9318, fax: +852 2886-9022/9044 renesas electronics taiwan co., ltd. 13f, no. 363, fu shing north road, taipei, taiwan tel: +886-2-8175-9600, fax: +886 2-8175-9670 renesas electronics singapore pte. ltd. 80 bendemeer road, unit #06-02 hyflux innovation centre singapore 339949 tel: +65-6213-0200, fax: +65-6213-0300 renesas electronics mala y sia sdn.bhd. unit 906, block b, menara amcorp, amcorp trade centre, no. 18, jln persiaran barat, 46050 petalin g jaya, selan g or darul ehsan, malaysi a tel: +60-3-7955-9390 , fax: +60-3-7955-951 0 renesas electronics korea co. , ltd . 11f., samik lavied' or bld g ., 720-2 yeoksam-don g , kan g nam-ku, seoul 135-080, korea tel: +82-2-558-3737 , fax: +82-2-558-514 1 s ale s o ffi c e s ? 2012 renesas electronics corporation. all ri g hts reserved . colo p hon 2.2 |
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